FMP20N50ES. Аналоги и основные параметры

Наименование производителя: FMP20N50ES

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 270 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 38 ns

Cossⓘ - Выходная емкость: 250 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.31 Ohm

Тип корпуса: TO-220AB

Аналог (замена) для FMP20N50ES

- подборⓘ MOSFET транзистора по параметрам

 

FMP20N50ES даташит

 ..1. Size:490K  fuji
fmp20n50es.pdfpdf_icon

FMP20N50ES

FMP20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V

 5.1. Size:360K  fuji
fmp20n50e.pdfpdf_icon

FMP20N50ES

FMP20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

 8.1. Size:410K  fuji
fmp20n60s1.pdfpdf_icon

FMP20N50ES

http //www.fujielectric.com/products/semiconductor/ FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance 4.5 0.2 TO-220 10+0.5 0 1.3 0.2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS 1.2 0.2 Server PRE-S

 8.2. Size:206K  inchange semiconductor
fmp20n60s1.pdfpdf_icon

FMP20N50ES

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMP20N60S1 FEATURES With TO-220 packaging Low switching loss Low on-state resistance Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE MAXIMUM RA

Другие IGBT... FMP12N60ES, FMP13N60E, FMP13N60ES, FMP16N50E, FMP16N50ES, FMP16N60E, FMP16N60ES, FMP20N50E, 20N60, FMP20N60S1, FMP30N60S1, FMP76-010T, FMR09N90E, FMR11N90E, FMR17N60ES, FMR19N60E, FMR19N60ES