IRFU9020 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFU9020
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 42 W
Предельно допустимое напряжение сток-исток |Uds|: 50 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 9.9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9.4 nC
Время нарастания (tr): 57 ns
Выходная емкость (Cd): 320 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.28 Ohm
Тип корпуса: TO251
IRFU9020 Datasheet (PDF)
irfr9020 irfr9022 irfu9020 irfu9022.pdf
Document Number: 90350 www.vishay.comC-65Document Number: 90350 www.vishay.comC-66Document Number: 90350 www.vishay.comC-67Document Number: 90350 www.vishay.comC-68Document Number: 90350 www.vishay.comC-69Document Number: 90350 www.vishay.comC-70Document Number: 90350 www.vishay.comC-71Document Number: 90350 www.vishay.comC-72Legal Disclaimer NoticeVish
irfr9020pbf irfu9020pbf sihfr9020 sihfu9020.pdf
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface Mountable (Order As IRFR9020,VDS (V) - 50 SiHFR9020) Straight Lead Option (Order As IRFU9020,RDS(on) ()VGS = - 10 V 0.28SiHFU9020)Qg (Max.) (nC) 14 Repetitive Avalanche Ratings Qgs (nC) 6.5 Dynamic dV/dt Rating Simple Drive Requirements
irfr9020 irfu9020 sihfr9020 sihfu9020.pdf
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 50DefinitionRDS(on) ()VGS = - 10 V 0.28 Surface Mountable (Order As IRFR9020,Qg (Max.) (nC) 14SiHFR9020)Qgs (nC) 6.5 Straight Lead Option (Order As IRFU9020,SiHFU9020)Qgd (nC) 6.5 Repetitive Avalanche Ratings
irfr9024ncpbf irfu9024ncpbf.pdf
PD - 96048IRFR9024NCPbFIRFU9024NCPbF(IRFR9024NCPbF)(IRFU9024NCPbF) Lead-Freewww.irf.com 105/31/06IRFR/U9024NCPbF2 www.irf.comIRFR/U9024NCPbFwww.irf.com 3IRFR/U9024NCPbF4 www.irf.comIRFR/U9024NCPbFwww.irf.com 5IRFR/U9024NCPbF6 www.irf.comIRFR/U9024NCPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductanc
irfr9024npbf irfu9024npbf.pdf
PD - 95015AIRFR9024NPbFIRFU9024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U9024NPbF2 www.irf.comIRFR/U9024NPbFwww.irf.com 3IRFR/U9024NPbF4 www.irf.comIRFR/U9024NPbFwww.irf.com 5IRFR/U9024NPbF6 www.irf.comIRFR/U9024NPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In
irfr9024pbf irfu9024pbf.pdf
PD- 95732AIRFR9024PbFIRFU9024PbF Lead-Free1/10/05Document Number: 91278 www.vishay.com1IRFR/U9024PbFDocument Number: 91278 www.vishay.com2IRFR/U9024PbFDocument Number: 91278 www.vishay.com3IRFR/U9024PbFDocument Number: 91278 www.vishay.com4IRFR/U9024PbFDocument Number: 91278 www.vishay.com5IRFR/U9024PbFDocument Number: 91278 www.vishay.com6IR
irfr9024 irfu9024 sihfr9024 sihfu9024.pdf
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRFR9024/SiHFR9024)RoHS*COMPLIANTQg (Max.) (nC) 19 Straight Lead (IRFU9024/SiHFU9024)Qgs (nC) 5.4 Available in Tape and ReelQgd (nC) 11 P
irfu9024pbf sihfr9024 sihfu9024.pdf
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRFR9024, SiHFR9024)Qg (Max.) (nC) 19 Straight Lead (IRFU9024, SiHFU9024)Qgs (nC) 5.4 Available in Tape and ReelQgd (nC) 11 P-ChannelC
irfr9024npbf irfu9024npbf.pdf
PD - 95015AIRFR9024NPbFIRFU9024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U9024NPbF2 www.irf.comIRFR/U9024NPbFwww.irf.com 3IRFR/U9024NPbF4 www.irf.comIRFR/U9024NPbFwww.irf.com 5IRFR/U9024NPbF6 www.irf.comIRFR/U9024NPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In
auirfr9024n auirfu9024n.pdf
AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian
irfu9024n.pdf
isc P-Channel MOSFET Transistor IRFU9024NFEATURESStatic drain-source on-resistance:RDS(on)175m(@V = -10V; I = -6.6A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFast switching application.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
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