FMV12N50E. Аналоги и основные параметры

Наименование производителя: FMV12N50E

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 60 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 160 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm

Тип корпуса: TO-220F

Аналог (замена) для FMV12N50E

- подборⓘ MOSFET транзистора по параметрам

 

FMV12N50E даташит

 ..1. Size:374K  fuji
 fmv12n50e.pdf pdf_icon

FMV12N50E

FMV12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.

 ..2. Size:201K  inchange semiconductor
 fmv12n50e.pdf pdf_icon

FMV12N50E

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMV12N50E FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE

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 fmv12n50es.pdf pdf_icon

FMV12N50E

FMV12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.

 8.1. Size:527K  fuji
 fmv12n60es.pdf pdf_icon

FMV12N50E

FMV12N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FMV06N90E, FMV07N50E, FMV08N50E, FMV09N90E, FMV10N60E, FMV10N80E, FMV11N60E, FMV11N90E, 2N7002, FMV12N50ES, FMV12N60ES, FMV13N60E, FMV13N60ES, FMV16N50E, FMV16N50ES, FMV16N60E, FMV16N60ES