FQAF17P10 - описание и поиск аналогов

 ..1. Size:666K  fairchild semi
 fqaf17p10.pdf 

 8.1. Size:702K  fairchild semi
 fqaf17n40.pdf 

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 12.2A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has be

 9.1. Size:633K  fairchild semi
 fqaf11n90c.pdf 

QFET FQAF11N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 900V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fa

 9.2. Size:525K  fairchild semi
 fqaf19n60.pdf 

April 2000 TM QFET QFET QFET QFET FQAF19N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 600V, RDS(on) = 0.38 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has be

 9.3. Size:695K  fairchild semi
 fqaf11n40.pdf 

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 8.8A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has bee

 9.4. Size:743K  fairchild semi
 fqaf15n70.pdf 

April 2000 TM QFET QFET QFET QFET 700V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 700V, RDS(on) = 0.56 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 70 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology has b

 9.5. Size:537K  fairchild semi
 fqaf12n60.pdf 

April 2000 TM QFET QFET QFET QFET FQAF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.8A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been

 9.6. Size:716K  fairchild semi
 fqaf13n80.pdf 

March 2001 TM QFET FQAF13N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0A, 800V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 68 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailore

 9.7. Size:707K  fairchild semi
 fqaf14n30.pdf 

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.4A, 300V, RDS(on) = 0.29 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has bee

 9.8. Size:854K  fairchild semi
 fqaf16n25c.pdf 

QFET FQAF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.4A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to

 9.9. Size:662K  fairchild semi
 fqaf11n90.pdf 

September 2000 TM QFET QFET QFET QFET FQAF11N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.2A, 900V, RDS(on) = 0.96 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 72 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has

 9.10. Size:719K  fairchild semi
 fqaf16n50.pdf 

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.3A, 500V, RDS(on) = 0.32 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has be

 9.11. Size:712K  fairchild semi
 fqaf19n20l.pdf 

May 2000 TM QFET QFET QFET QFET 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has

 9.12. Size:700K  fairchild semi
 fqaf10n80.pdf 

TM QFET FQAF10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.7A, 800V, RDS(on) = 1.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fa

 9.13. Size:710K  fairchild semi
 fqaf16n25.pdf 

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 12.4A, 250V, RDS(on) = 0.23 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been

 9.14. Size:688K  fairchild semi
 fqaf19n20.pdf 

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 15A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been

 9.15. Size:615K  fairchild semi
 fqaf12p20.pdf 

May 2000 TM QFET QFET QFET QFET FQAF12P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 9.16. Size:993K  onsemi
 fqaf16n50.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur