FQB11N40CTM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQB11N40CTM
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 135 W
Предельно допустимое напряжение сток-исток |Uds|: 400 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 10.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 28 nC
Время нарастания (tr): 89 ns
Выходная емкость (Cd): 250 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.53 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB11N40CTM
FQB11N40CTM Datasheet (PDF)
fqb11n40ctm.pdf
October 2008QFETFQB11N40C/FQI11N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 85pF)This advanced technology has been especia
fqb11n40c.pdf
November 2013FQB11N40CN-Channel QFET MOSFET400 V, 10.5 A, 530 m Description FeaturesThese N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 5.25 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tai
fqb11n40c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqb11n40tm fqi11n40tu.pdf
November 2001FQB11N40 / FQI11N40400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tai
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