Справочник MOSFET. FQB13N10LTM

 

FQB13N10LTM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQB13N10LTM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12.8 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 8.7 nC
   trⓘ - Время нарастания: 220 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: D2-PAK

 Аналог (замена) для FQB13N10LTM

 

 

FQB13N10LTM Datasheet (PDF)

 ..1. Size:566K  fairchild semi
 fqb13n10ltm.pdf

FQB13N10LTM FQB13N10LTM

December 2000TMQFETQFETQFETQFETFQB13N10L / FQI13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanc

 6.1. Size:635K  fairchild semi
 fqb13n10.pdf

FQB13N10LTM FQB13N10LTM

January 2001TMQFETQFETQFETQFETFQB13N10 / FQI13N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technol

 8.1. Size:673K  fairchild semi
 fqb13n06tm fqi13n06tu.pdf

FQB13N10LTM FQB13N10LTM

May 2001TMQFETFQB13N06 / FQI13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

 8.2. Size:668K  fairchild semi
 fqb13n06ltm fqi13n06ltu.pdf

FQB13N10LTM FQB13N10LTM

May 2001TMQFETFQB13N06L / FQI13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

 8.3. Size:967K  fairchild semi
 fqb13n50ctm fqb13n50c fqi13n50c fqi13n50ctu.pdf

FQB13N10LTM FQB13N10LTM

October 2008QFETFQB13N50C/FQI13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially

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