Справочник MOSFET. FQB13N10

 

FQB13N10 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQB13N10
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12.8 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: D2-PAK
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

FQB13N10 Datasheet (PDF)

 ..1. Size:635K  fairchild semi
 fqb13n10.pdf pdf_icon

FQB13N10

January 2001TMQFETQFETQFETQFETFQB13N10 / FQI13N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technol

 0.1. Size:566K  fairchild semi
 fqb13n10ltm.pdf pdf_icon

FQB13N10

December 2000TMQFETQFETQFETQFETFQB13N10L / FQI13N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.7 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanc

 8.1. Size:673K  fairchild semi
 fqb13n06tm fqi13n06tu.pdf pdf_icon

FQB13N10

May 2001TMQFETFQB13N06 / FQI13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

 8.2. Size:668K  fairchild semi
 fqb13n06ltm fqi13n06ltu.pdf pdf_icon

FQB13N10

May 2001TMQFETFQB13N06L / FQI13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

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Другие MOSFET... FQB12N50TMAM002 , FQB12N60CTM , FQB12N60TMAM002 , FQB12P10TM , FQB12P20TM , FQB13N06LTM , FQB13N06TM , FQB13N10LTM , IRFZ46N , FQB13N50CTM , FQB14N15 , FQB14N30TM , FQB15P12TM , FQB16N15TM , FQB16N25CTM , FQB16N25TM , FQB17N08LTM .

History: 2SK758 | 2P771A | BF998

 

 
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