FQB17P06TM. Аналоги и основные параметры

Наименование производителя: FQB17P06TM

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 79 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 100 ns

Cossⓘ - Выходная емкость: 325 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm

Тип корпуса: D2-PAK

Аналог (замена) для FQB17P06TM

- подборⓘ MOSFET транзистора по параметрам

 

FQB17P06TM даташит

 ..1. Size:691K  fairchild semi
 fqb17p06tm fqi17p06tu.pdf pdf_icon

FQB17P06TM

May 2001 TM QFET FQB17P06 / FQI17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially

 8.1. Size:710K  fairchild semi
 fqb17p10tm.pdf pdf_icon

FQB17P06TM

TM QFET FQB17P10 / FQI17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tail

 9.1. Size:614K  fairchild semi
 fqb17n08tm fqi17n08tu.pdf pdf_icon

FQB17P06TM

January 2001 TM QFET QFET QFET QFET FQB17N08 / FQI17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technolo

 9.2. Size:569K  fairchild semi
 fqb17n08ltm fqi17n08ltu.pdf pdf_icon

FQB17P06TM

December 2000 TM QFET QFET QFET QFET FQB17N08L / FQI17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FQB14N15, FQB14N30TM, FQB15P12TM, FQB16N15TM, FQB16N25CTM, FQB16N25TM, FQB17N08LTM, FQB17N08TM, P60NF06, FQB17P10TM, FQB19N10LTM, FQB19N10TM, FQB19N20CTM, FQB19N20LTM, FQB19N20TM, FQB1N60TM, FQB1P50TM