FQB19N10LTM Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQB19N10LTM
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 410 ns
Cossⓘ - Выходная емкость: 160 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для FQB19N10LTM
FQB19N10LTM Datasheet (PDF)
fqb19n10ltm.pdf

August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec
fqb19n10tm.pdf

October 2008QFETFQB19N10 / FQI19N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 32 pF)This advanced technology has been especially
fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf

October 2008QFETFQB19N20 / FQI19N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espec
fqb19n20ltm fqb19n20l fqi19n20l.pdf

October 2008QFETFQB19N20L / FQI19N20L200V LOGIC N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been
Другие MOSFET... FQB15P12TM , FQB16N15TM , FQB16N25CTM , FQB16N25TM , FQB17N08LTM , FQB17N08TM , FQB17P06TM , FQB17P10TM , RU6888R , FQB19N10TM , FQB19N20CTM , FQB19N20LTM , FQB19N20TM , FQB1N60TM , FQB1P50TM , FQB20N06LTM , FQB20N06TM .
History: RZL025P01TR | SM4435 | STD7N80K5 | SI4682DY | LSB60R030HT | AOT7S60L | IXTA8N50P
History: RZL025P01TR | SM4435 | STD7N80K5 | SI4682DY | LSB60R030HT | AOT7S60L | IXTA8N50P



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