Справочник MOSFET. FQB2N50TM

 

FQB2N50TM Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQB2N50TM
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5.3 Ohm
   Тип корпуса: D2-PAK
 

 Аналог (замена) для FQB2N50TM

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQB2N50TM Datasheet (PDF)

 ..1. Size:720K  fairchild semi
 fqb2n50tm.pdf pdf_icon

FQB2N50TM

April 2000TMQFETQFETQFETQFETFQB2N50 / FQI2N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 500V, RDS(on) = 5.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.0 pF)This advanced technolog

 9.1. Size:579K  fairchild semi
 fqb2n60tm.pdf pdf_icon

FQB2N50TM

April 2000TMQFETQFETQFETQFETFQB2N60 / FQI2N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

 9.2. Size:754K  fairchild semi
 fqb2n90tm fqi2n90tu.pdf pdf_icon

FQB2N50TM

April 2000TMQFETQFETQFETQFETFQB2N90 / FQI2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technolo

 9.3. Size:705K  fairchild semi
 fqb2na90tm fqi2na90tu.pdf pdf_icon

FQB2N50TM

September 2000TMQFETQFETQFETQFETFQB2NA90 / FQI2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced tech

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQB20N06LTM , FQB20N06TM , FQB22P10TM , FQB24N08TM , FQB25N33TM , FQB27N25TMAM002 , FQB27P06TM , FQB2N30TM , 2N7002 , FQB2N60TM , FQB2N80TM , FQB2N90TM , FQB2NA90TM , FQB2P25TM , FQB2P40TM , FQB30N06LTM , FQB30N06TM .

History: HGN093N12S | FQPF5N50CYDTU | IRFS9N60APBF

 

 
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