FQB3N30TM - аналоги и даташиты транзистора

 

FQB3N30TM - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQB3N30TM
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
   Тип корпуса: D2-PAK
 

 Аналог (замена) для FQB3N30TM

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQB3N30TM Datasheet (PDF)

 ..1. Size:718K  fairchild semi
 fqb3n30tm fqi3n30tu.pdf pdf_icon

FQB3N30TM

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 9.1. Size:621K  fairchild semi
 fqb3n25tm fqi3n25tu.pdf pdf_icon

FQB3N30TM

November 2000TMQFETQFETQFETQFETFQB3N25 / FQI3N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.7 pF)This advanced technolo

 9.2. Size:730K  fairchild semi
 fqb3n40tm fqi3n40tu.pdf pdf_icon

FQB3N30TM

April 2000TMQFETQFETQFETQFETFQB3N40 / FQI3N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technolog

 9.3. Size:695K  fairchild semi
 fqb3n90tm fqi3n90tu.pdf pdf_icon

FQB3N30TM

September 2000TMQFETQFETQFETQFETFQB3N90 / FQI3N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 900V, RDS(on) = 4.25 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced techn

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQB32N12V2TM , FQB32N20CTM , FQB33N10LTM , FQB33N10TM , FQB34N20LTM , FQB34N20TMAM002 , FQB34P10TM , FQB3N25TM , IRFZ44 , FQB3N40TM , FQB3N60CTM , FQB3N90TM , FQB3P20TM , FQB3P50TM , FQB46N15TMAM002 , FQB47P06TMAM002 , FQB4N20LTM .

History: AFN3030 | PMN120ENEA | IPP100N08S2-07 | MPSA70M290 | FQB2P40TM | HGS090NE6A | IPI041N12N3G

 

 
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