FQB4N50TM - Даташиты. Аналоги. Основные параметры

April 2000TMQFETQFETQFETQFETFQB4N50 / FQI4N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 500V, RDS(on) = 2.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

October 2008QFETFQB4N80 / FQI4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially

October 2001TMQFETFQB4N90 / FQI4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been es

December 2000TMQFETQFETQFETQFETFQB4N20L / FQI4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

April 2000TMQFETQFETQFETQFETFQB4N20 / FQI4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur