Справочник MOSFET. FQB8N60CFTM

 

FQB8N60CFTM Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQB8N60CFTM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 147 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.26 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 60.5 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: D2-PAK
     - подбор MOSFET транзистора по параметрам

 

FQB8N60CFTM Datasheet (PDF)

 ..1. Size:1032K  fairchild semi
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FQB8N60CFTM

October 2008TMQFETFQB8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28nC)DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to

 6.1. Size:965K  fairchild semi
fqb8n60c fqi8n60c fqi8n60ctu.pdfpdf_icon

FQB8N60CFTM

October 2008QFETFQB8N60C / FQI8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especiall

 6.2. Size:754K  onsemi
fqb8n60c fqi8n60c.pdfpdf_icon

FQB8N60CFTM

FQB8N60C / FQI8N60CN-Channel QFET MOSFET600 V, 7.5 A, 1.2 Features 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V,ID = 3.75 ADescription Low Gate Charge (Typ. 28 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Crss (Typ. 12 pF)stripe and DMOS technology. This advanced MOSFET technology has

 9.1. Size:594K  fairchild semi
fqb8n25tm.pdfpdf_icon

FQB8N60CFTM

May 2000TMQFETQFETQFETQFETFQB8N25 / FQI8N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 250V, RDS(on) = 0.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF7240 | HAT2053M | SL2301S | STK4N25 | IRF3707SPBF | P2202CM | FQP19N20L

 

 
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