FQB9N50CTM - параметры транзистора MOSFET, его аналоги, datasheet

FQB9N50CTM Datasheet (PDF)

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TMQFETFQB9N50C/FQI9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to

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October 2006TMFRFETFQB9N50CF500V N-Channel MOSFETFeatures Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28nC)DMOS technology. Low Crss ( typical 24pF)This advanced technology has been especially tailored to

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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April 2000TMQFETQFETQFETQFETFQB9N50 / FQI9N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology

Другие MOSFET... FQB8N60CFTM , FQB8P10TM , FQB9N08LTM , FQB9N08TM , FQB9N15TM , FQB9N25CTM , FQB9N25TM , FQB9N50CFTM , IRF9540N , FQB9N50TM , FQB9P25TM , FQD10N20CTF , FQD10N20CTM , FQD10N20LTF , FQD10N20LTM , FQD10N20TF , FQD10N20TM .