FQD1N60TM. Аналоги и основные параметры
Наименование производителя: FQD1N60TM
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 20 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 11.5 Ohm
Тип корпуса: D-PAK
Аналог (замена) для FQD1N60TM
- подборⓘ MOSFET транзистора по параметрам
FQD1N60TM даташит
fqd1n60tf fqd1n60tm fqu1n60tu.pdf
April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology
fqd1n60 fqu1n60.pdf
April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology
fqd1n60ctf fqd1n60ctm fqd1n60c fqu1n60c fqu1n60ctu.pdf
January 2009 QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. Low Crss ( typical 3.5 pF) This advanced technology has been especiall
fqd1n60c fqu1n60c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FQD19N10LTM, FQD19N10TF, FQD19N10TM, FQD1N50TF, FQD1N50TM, FQD1N60CTF, FQD1N60CTM, FQD1N60TF, IRF1404, FQD1N80TF, FQD1N80TM, FQD1P50TF, FQD1P50TM, FQD20N06L, FQD20N06TF, FQD20N06TM, FQD24N08TF
History: FQD1N80TF | UT65N03
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