FQD3N40TM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQD3N40TM
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 35 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm
Тип корпуса: D-PAK
FQD3N40TM Datasheet (PDF)
fqd3n40tm.pdf
April 2000TMQFETQFETQFETQFETFQD3N40 / FQU3N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technolog
fqd3n60 fqu3n60.pdf
April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h
fqd3n30tf fqd3n30tm.pdf
April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology
fqd3n60ctm ws.pdf
November 2013FQD3N60CTM_WSN-Channel QFET MOSFET600 V, 2.4 A, 3.4 Features Description 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 10.5 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 5 pF)MOSFET te
fqd3n50c fqu3n50c.pdf
March 2008 QFETFQD3N50C / FQU3N50C500V N-Channel MOSFETFeatures Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF)This advanced technology has been especially tai
fqd3n60tm fqu3n60 fqu3n60tu.pdf
April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h
fqd3n50ctf.pdf
March 2008 QFETFQD3N50C / FQU3N50C500V N-Channel MOSFETFeatures Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF)This advanced technology has been especially tai
fqd3n60ctm-ws.pdf
FQD3N60CTM-WSN-Channel QFET MOSFET Description600 V, 2.4 A, 3.4 This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Featuresstripe and DMOS technology. This advanced MOSFET 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 Atechnology has been especially tailored to reduce on-state resistance, and to pro
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918