FQD4N50TF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQD4N50TF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 55 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.7 Ohm
Тип корпуса: D-PAK
Аналог (замена) для FQD4N50TF
FQD4N50TF Datasheet (PDF)
fqd4n50tf fqd4n50tm fqd4n50 fqu4n50.pdf

January 2009QFETFQD4N50 / FQU4N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especiall
fqd4n25 fqu4n25.pdf

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology
fqd4n25tf fqd4n25tm fqu4n25tu.pdf

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology
fqd4n20ltm.pdf

December 2000TMQFETQFETQFETQFETFQD4N20L / FQU4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.2A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced
Другие MOSFET... FQD3P20TF , FQD3P20TM , FQD3P50TF , FQD3P50TM , FQD4N20LTM , FQD4N20TF , FQD4N25TF , FQD4N25TM , 20N50 , FQD4N50TM , FQD4P25TF , FQD4P25TM , FQD4P40 , FQD4P40TF , FQD4P40TM , FQD5N15TF , FQD5N15TM .
History: 2SK3111 | SIR468DP | AP9965GEH | AP2308GE | SSW80R160SFD | 13N50L-TQ2-T | STS4DNF30L
History: 2SK3111 | SIR468DP | AP9965GEH | AP2308GE | SSW80R160SFD | 13N50L-TQ2-T | STS4DNF30L



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