IRF2903ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF2903ZPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 290 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 100 ns
Выходная емкость (Cd): 1980 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0024 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для IRF2903ZPBF
IRF2903ZPBF Datasheet (PDF)
irf2903zpbf.pdf
PD -96097AIRF2903ZPbFFeatures HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescriptionDThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance
irf2903zpbf.pdf
PD -96097AIRF2903ZPbFFeatures HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescriptionDThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance
irf2903zlpbf irf2903zspbf.pdf
PD - 96098AIRF2903ZSPbFIRF2903ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4ml Repetitive Avalanche Allowed up to TjmaxGl Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestDDprocessing techniques to achieve extremel
auirf2903zs auirf2903zl.pdf
AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie
auirf2903z.pdf
AUTOMOTIVE GRADE AUIRF2903Z Features HEXFET Power MOSFET Advanced Planar Technology VDSS 30V Ultra Low On-Resistance RDS(on) typ. 1.9m 175C Operating Temperature max. 2.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 260A Lead-Free, RoHS Compliant ID (Package Limited) 160A Automotive Qu
irf2903z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2903ZIIRF2903ZFEATURESLow drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RA
irf2903zs.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2903ZSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
