Справочник MOSFET. IRF3704PBF

 

IRF3704PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF3704PBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 87 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 77 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 98 ns
   Cossⓘ - Выходная емкость: 1085 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF3704PBF

 

 

IRF3704PBF Datasheet (PDF)

 ..1. Size:265K  international rectifier
irf3704lpbf irf3704pbf irf3704spbf.pdf

IRF3704PBF
IRF3704PBF

PD - 95527IRF3704PbFSMPS MOSFET IRF3704SPbFIRF3704LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 20V 9.0m 77Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on)l Fully Chara

 7.1. Size:352K  international rectifier
irf3704zcspbf.pdf

IRF3704PBF
IRF3704PBF

PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa

 7.2. Size:360K  international rectifier
irf3704zlpbf irf3704zpbf irf3704zspbf.pdf

IRF3704PBF
IRF3704PBF

PD - 95463IRF3704ZPbFIRF3704ZSPbFIRF3704ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxConverters for Computer Processor Power Qgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3704ZIRF3704ZS IRF3704ZLAbso

 7.3. Size:125K  international rectifier
irf3704.pdf

IRF3704PBF
IRF3704PBF

PD - 93888BIRF3704SMPS MOSFET IRF3704SIRF3704LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 20V 9.0m 77A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage

 7.4. Size:352K  international rectifier
irf3704zclpbf.pdf

IRF3704PBF
IRF3704PBF

PD - 95107IRF3704ZCSPbFIRF3704ZCLPbFAppIicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor Power VDSS RDS(on) maxQgl Lead-Free20V 7.9m: 8.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-262D2PakIRF3704ZCLPbFIRF3704ZCSPbFAbsoIute Maximum RatingsPa

 7.5. Size:128K  international rectifier
irf3704l.pdf

IRF3704PBF
IRF3704PBF

PD - 93888BIRF3704SMPS MOSFET IRF3704SIRF3704LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 20V 9.0m 77A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage

 7.6. Size:246K  inchange semiconductor
irf3704z.pdf

IRF3704PBF
IRF3704PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZIIRF3704ZFEATURESLow drain-source on-resistance:RDS(on) 7.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RA

 7.7. Size:258K  inchange semiconductor
irf3704zs.pdf

IRF3704PBF
IRF3704PBF

Isc N-Channel MOSFET Transistor IRF3704ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 7.8. Size:252K  inchange semiconductor
irf3704zcs.pdf

IRF3704PBF
IRF3704PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3704ZCSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

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