IRF3707 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF3707
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 87 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 62 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 19 nC
Время нарастания (tr): 78 ns
Выходная емкость (Cd): 707 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0125 Ohm
Тип корпуса: TO-220AB
IRF3707 Datasheet (PDF)
irf3707s irf3707 irf3707l.pdf
PD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 30V 12.5m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage
irf3707lpbf irf3707pbf irf3707spbf.pdf
PD -95528IRF3707PbFIRF3707SPbFSMPS MOSFETIRF3707LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectificationfor Telecom and Industrial use 30V 12.5m 62Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on)TO-220ABD2Pak
irf3707.pdf
PD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 30V 12.5m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage
irf3707zclpbf irf3707zcspbf.pdf
PD - 95464AIRF3707ZCSPbFIRF3707ZCLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 9.5m 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3707ZCSPbFIRF3707ZCLPbFAbsolute Maximum RatingsP
irf3707zlpbf irf3707zpbf irf3707zspbf.pdf
PD - 95333AIRF3707ZPbFIRF3707ZSPbFIRF3707ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl Lead-Free30V 9.5m 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220AB D2Pak TO-262IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF
irf3707z irf3707zs irf3707zl.pdf
PD - 95812AIRF3707ZIRF3707ZSIRF3707ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 9.5m: 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3707ZIRF3707ZS IRF3707ZLAbsolute Maximum Ratings
irf3707zs.pdf
isc N-Channel MOSFET Transistor IRF3707ZSDESCRIPTIONDrain Current :I = 59A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL
irf3707z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3707Z IIRF3707ZFEATURESLow drain-source on-resistance:RDS(on) 9.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
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