Справочник MOSFET. IRF3707

 

IRF3707 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF3707
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 87 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 62 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 78 ns
   Cossⓘ - Выходная емкость: 707 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF3707

 

 

IRF3707 Datasheet (PDF)

 ..1. Size:147K  international rectifier
 irf3707s irf3707 irf3707l.pdf

IRF3707 IRF3707

PD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 30V 12.5m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage

 ..2. Size:281K  international rectifier
 irf3707lpbf irf3707pbf irf3707spbf.pdf

IRF3707 IRF3707

PD -95528IRF3707PbFIRF3707SPbFSMPS MOSFETIRF3707LPbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectificationfor Telecom and Industrial use 30V 12.5m 62Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on)TO-220ABD2Pak

 ..3. Size:143K  international rectifier
 irf3707.pdf

IRF3707 IRF3707

PD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707LApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedConverters with Synchronous RectificationVDSS RDS(on) max IDfor Telecom and Industrial use 30V 12.5m 62A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage

 0.1. Size:351K  international rectifier
 irf3707zclpbf irf3707zcspbf.pdf

IRF3707 IRF3707

PD - 95464AIRF3707ZCSPbFIRF3707ZCLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 9.5m 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3707ZCSPbFIRF3707ZCLPbFAbsolute Maximum RatingsP

 0.2. Size:376K  international rectifier
 irf3707zlpbf irf3707zpbf irf3707zspbf.pdf

IRF3707 IRF3707

PD - 95333AIRF3707ZPbFIRF3707ZSPbFIRF3707ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQgl Lead-Free30V 9.5m 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220AB D2Pak TO-262IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF

 0.3. Size:407K  international rectifier
 irf3707z irf3707zs irf3707zl.pdf

IRF3707 IRF3707

PD - 95812AIRF3707ZIRF3707ZSIRF3707ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 9.5m: 9.7nCBenefitsl Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche Voltageand CurrentTO-220ABD2Pak TO-262IRF3707ZIRF3707ZS IRF3707ZLAbsolute Maximum Ratings

 0.4. Size:244K  inchange semiconductor
 irf3707zs.pdf

IRF3707 IRF3707

isc N-Channel MOSFET Transistor IRF3707ZSDESCRIPTIONDrain Current :I = 59A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL

 0.5. Size:246K  inchange semiconductor
 irf3707z.pdf

IRF3707 IRF3707

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3707Z IIRF3707ZFEATURESLow drain-source on-resistance:RDS(on) 9.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

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