Справочник MOSFET. IRF3709ZLPBF

 

IRF3709ZLPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF3709ZLPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 79 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 87 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 17 nC
   trⓘ - Время нарастания: 41 ns
   Cossⓘ - Выходная емкость: 450 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0063 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для IRF3709ZLPBF

 

 

IRF3709ZLPBF Datasheet (PDF)

 ..1. Size:377K  international rectifier
 irf3709zlpbf irf3709zpbf irf3709zspbf.pdf

IRF3709ZLPBF IRF3709ZLPBF

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

 ..2. Size:377K  infineon
 irf3709zpbf irf3709zspbf irf3709zlpbf.pdf

IRF3709ZLPBF IRF3709ZLPBF

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

 5.1. Size:337K  international rectifier
 irf3709z irf3709zl irf3709zs.pdf

IRF3709ZLPBF IRF3709ZLPBF

PD - 95835IRF3709ZIRF3709ZSIRF3709ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum RatingsParameter M

 6.1. Size:312K  international rectifier
 irf3709zcs.pdf

IRF3709ZLPBF IRF3709ZLPBF

PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S

 6.2. Size:312K  international rectifier
 irf3709zcl.pdf

IRF3709ZLPBF IRF3709ZLPBF

PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S

 6.3. Size:361K  international rectifier
 irf3709zclpbf.pdf

IRF3709ZLPBF IRF3709ZLPBF

PD - 95529IRF3709ZCSPbFIRF3709ZCLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. Uni

 6.4. Size:271K  inchange semiconductor
 irf3709zcs.pdf

IRF3709ZLPBF IRF3709ZLPBF

isc N-Channel MOSFET Transistor IRF3709ZCSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6.3m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM

 6.5. Size:248K  inchange semiconductor
 irf3709zs.pdf

IRF3709ZLPBF IRF3709ZLPBF

isc N-Channel MOSFET Transistor IRF3709ZSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6.3m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM

 6.6. Size:247K  inchange semiconductor
 irf3709z.pdf

IRF3709ZLPBF IRF3709ZLPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3709Z IIRF3709ZFEATURESLow drain-source on-resistance:RDS(on) 6.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

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