Справочник MOSFET. IRF3709ZPBF

 

IRF3709ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF3709ZPBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 79 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.25 V
   Максимально допустимый постоянный ток стока |Id|: 87 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 17 nC
   Время нарастания (tr): 41 ns
   Выходная емкость (Cd): 450 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0063 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для IRF3709ZPBF

 

 

IRF3709ZPBF Datasheet (PDF)

 ..1. Size:377K  international rectifier
irf3709zlpbf irf3709zpbf irf3709zspbf.pdf

IRF3709ZPBF
IRF3709ZPBF

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

 ..2. Size:377K  infineon
irf3709zpbf irf3709zspbf irf3709zlpbf.pdf

IRF3709ZPBF
IRF3709ZPBF

PD -95465IRF3709ZPbFIRF3709ZSPbFIRF3709ZLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum

 6.1. Size:337K  international rectifier
irf3709z irf3709zl irf3709zs.pdf

IRF3709ZPBF
IRF3709ZPBF

PD - 95835IRF3709ZIRF3709ZSIRF3709ZLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche VoltageTO-220ABD2Pak TO-262and CurrentIRF3709ZIRF3709ZS IRF3709ZLAbsolute Maximum RatingsParameter M

 6.2. Size:312K  international rectifier
irf3709zcs.pdf

IRF3709ZPBF
IRF3709ZPBF

PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S

 6.3. Size:312K  international rectifier
irf3709zcl.pdf

IRF3709ZPBF
IRF3709ZPBF

PD - 95836IRF3709ZCSIRF3709ZCLApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. UnitsVDSDrain-to-S

 6.4. Size:361K  international rectifier
irf3709zclpbf.pdf

IRF3709ZPBF
IRF3709ZPBF

PD - 95529IRF3709ZCSPbFIRF3709ZCLPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl Lead-Free30V 6.3m: 17nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentD2Pak TO-262IRF3709ZCS IRF3709ZCLAbsolute Maximum RatingsParameter Max. Uni

 6.5. Size:271K  inchange semiconductor
irf3709zcs.pdf

IRF3709ZPBF
IRF3709ZPBF

isc N-Channel MOSFET Transistor IRF3709ZCSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6.3m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM

 6.6. Size:248K  inchange semiconductor
irf3709zs.pdf

IRF3709ZPBF
IRF3709ZPBF

isc N-Channel MOSFET Transistor IRF3709ZSDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6.3m@V = 10VGSDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .High Frequency Synchronous Buck Converters for ComputerProcessor Power.ABSOLUTE MAXIMUM

 6.7. Size:247K  inchange semiconductor
irf3709z.pdf

IRF3709ZPBF
IRF3709ZPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3709Z IIRF3709ZFEATURESLow drain-source on-resistance:RDS(on) 6.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

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