IRF3710ZPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF3710ZPBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 160 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 59 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 82 nC
trⓘ - Время нарастания: 77 ns
Cossⓘ - Выходная емкость: 290 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для IRF3710ZPBF
IRF3710ZPBF Datasheet (PDF)
irf3710zlpbf irf3710zpbf irf3710zspbf.pdf
PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn
irf3710zpbf irf3710zspbf irf3710zlpbf.pdf
PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn
irf3710z.pdf
PD - 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th
auirf3710zstrl.pdf
PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE
auirf3710z auirf3710zs.pdf
PD - 97470AUIRF3710ZAUTOMOTIVE GRADEAUIRF3710ZSFeaturesHEXFET Power MOSFET Low On-Resistance 175C Operating TemperatureDVDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18m Lead-Free, RoHS CompliantG Automotive Qualified *ID = 59ADescriptionSSpecifically designed for Automotive applications,this HE
irf3710z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3710ZIIRF3710ZFEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
irf3710zs.pdf
Isc N-Channel MOSFET Transistor IRF3710ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
irf3710zl.pdf
Isc N-Channel MOSFET Transistor IRF3710ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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