IRF3808PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF3808PBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 330 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 140 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 150 nC
Время нарастания (tr): 140 ns
Выходная емкость (Cd): 890 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.007 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для IRF3808PBF
IRF3808PBF Datasheet (PDF)
irf3808pbf.pdf
PD - 94972AIRF3808PbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 140A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe HEXFET Power
irf3808pbf.pdf
PD - 94972AIRF3808PbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 140A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe HEXFET Power
irf3808s.pdf
PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T
irf3808lpbf irf3808spbf.pdf
PD - 95467AIRF3808SPbFIRF3808LPbFTypical Applications HEXFET Power MOSFET Industrial Motor DriveDVDSS = 75VBenefits Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007G Dynamic dv/dt Rating 175C Operating TemperatureID = 106A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis Advanced Planar Stripe H
auirf3808.pdf
PD - 97697AAUTOMOTIVE GRADEAUIRF3808HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.5.9ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 7.0ml Fast SwitchingSID140Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*D
irf3808.pdf
PD - 94291BIRF3808AUTOMOTIVE MOSFETHEXFET Power MOSFETTypical Applications Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.007 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating TemperatureID = 140AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescr
auirf3808s.pdf
PD - 97698AAUTOMOTIVE GRADEAUIRF3808SHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance VDSS 75V Dynamic dV/dT RatingRDS(on) typ.5.9m 175C Operating TemperatureG max. 7.0m Fast SwitchingS Fully Avalanche Rated ID106A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
irf3808l.pdf
PD - 94338AIRF3808SAUTOMOTIVE MOSFETIRF3808LTypical ApplicationsHEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical SystemsDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.007 Dynamic dv/dt RatingG 175C Operating TemperatureID = 106AV Fast SwitchingS Repetitive Avalanche Allowed up to T
irf3808s.pdf
Isc N-Channel MOSFET Transistor IRF3808SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
irf3808.pdf
isc N-Channel MOSFET Transistor IRF3808IIRF3808FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
irf3808l.pdf
Isc N-Channel MOSFET Transistor IRF3808LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75
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