FQI4N90TU Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQI4N90TU
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 90 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.3 Ohm
Тип корпуса: I2-PAK
Аналог (замена) для FQI4N90TU
FQI4N90TU Datasheet (PDF)
fqb4n90tm fqi4n90tu.pdf

October 2001TMQFETFQB4N90 / FQI4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been es
fqi4n90.pdf

November 2013FQI4N90N-Channel QFET MOSFET900 V, 4.2 A, 3.3 Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.2 A, 900 V, RDS(on) = 3.3 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 2.1 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 24 nC)technology has been especially tai
fqb4n25tm fqi4n25tu.pdf

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology
fqb4n80 fqi4n80.pdf

October 2008QFETFQB4N80 / FQI4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially
Другие MOSFET... FQI3N30TU , FQI3N40TU , FQI3N90TU , FQI3P20TU , FQI3P50TU , FQI47P06TU , FQI4N20TU , FQI4N25TU , AO3400 , FQI4P40TU , FQI50N06LTU , FQI50N06TU , FQI5N15TU , FQI5N20LTU , FQI5N20TU , FQI5N30TU , FQI5N40TU .
History: HUFA75337G3 | TPC60R150C | BRCS065N08SHRA
History: HUFA75337G3 | TPC60R150C | BRCS065N08SHRA



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