FQI4N90TU. Аналоги и основные параметры

Наименование производителя: FQI4N90TU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 140 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 70 ns

Cossⓘ - Выходная емкость: 90 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.3 Ohm

Тип корпуса: I2-PAK

Аналог (замена) для FQI4N90TU

- подборⓘ MOSFET транзистора по параметрам

 

FQI4N90TU даташит

 ..1. Size:644K  fairchild semi
 fqb4n90tm fqi4n90tu.pdf pdf_icon

FQI4N90TU

October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 24 nC) planar stripe, DMOS technology. Low Crss ( typically 9.5 pF) This advanced technology has been es

 7.1. Size:821K  fairchild semi
 fqi4n90.pdf pdf_icon

FQI4N90TU

November 2013 FQI4N90 N-Channel QFET MOSFET 900 V, 4.2 A, 3.3 Description Features This N-Channel enhancement mode power MOSFET is 4.2 A, 900 V, RDS(on) = 3.3 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 2.1 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 24 nC) technology has been especially tai

 9.1. Size:726K  fairchild semi
 fqb4n25tm fqi4n25tu.pdf pdf_icon

FQI4N90TU

May 2000 TM QFET QFET QFET QFET FQB4N25 / FQI4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology

 9.2. Size:8196K  fairchild semi
 fqb4n80 fqi4n80.pdf pdf_icon

FQI4N90TU

October 2008 QFET FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially

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