FQI5N20TU - аналоги и даташиты транзистора

 

FQI5N20TU - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQI5N20TU
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: I2-PAK
 

 Аналог (замена) для FQI5N20TU

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQI5N20TU Datasheet (PDF)

 ..1. Size:700K  fairchild semi
 fqb5n20tm fqi5n20tu.pdf pdf_icon

FQI5N20TU

April 2000TMQFETQFETQFETQFETFQB5N20 / FQI5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 7.1. Size:539K  fairchild semi
 fqb5n20l fqi5n20l.pdf pdf_icon

FQI5N20TU

December 2000TMQFETQFETQFETQFETFQB5N20L / FQI5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

 7.2. Size:538K  fairchild semi
 fqb5n20ltm fqi5n20ltu.pdf pdf_icon

FQI5N20TU

December 2000TMQFETQFETQFETQFETFQB5N20L / FQI5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

 9.1. Size:655K  fairchild semi
 fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf pdf_icon

FQI5N20TU

TMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQI4N20TU , FQI4N25TU , FQI4N90TU , FQI4P40TU , FQI50N06LTU , FQI50N06TU , FQI5N15TU , FQI5N20LTU , IRFB3607 , FQI5N30TU , FQI5N40TU , FQI5N50CTU , FQI5N60CTU , FQI5N80TU , FQI5P10TU , FQI6N15TU , FQI6N40CTU .

History: KP723B | IPZA60R045P7 | WMJ28N65F2 | 2SK2908-01L | NCE25P60K | 30N06L-TF1-T | PMV90EN

 

 
Back to Top

 


 
.