FQI5N20TU. Аналоги и основные параметры

Наименование производителя: FQI5N20TU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 52 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 55 ns

Cossⓘ - Выходная емкость: 40 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm

Тип корпуса: I2-PAK

Аналог (замена) для FQI5N20TU

- подборⓘ MOSFET транзистора по параметрам

 

FQI5N20TU даташит

 ..1. Size:700K  fairchild semi
 fqb5n20tm fqi5n20tu.pdf pdf_icon

FQI5N20TU

April 2000 TM QFET QFET QFET QFET FQB5N20 / FQI5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology

 7.1. Size:539K  fairchild semi
 fqb5n20l fqi5n20l.pdf pdf_icon

FQI5N20TU

December 2000 TM QFET QFET QFET QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced

 7.2. Size:538K  fairchild semi
 fqb5n20ltm fqi5n20ltu.pdf pdf_icon

FQI5N20TU

December 2000 TM QFET QFET QFET QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced

 9.1. Size:655K  fairchild semi
 fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf pdf_icon

FQI5N20TU

TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored

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