Справочник MOSFET. FQI6N15TU

 

FQI6N15TU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQI6N15TU
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.4 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 48 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: I2-PAK
 

 Аналог (замена) для FQI6N15TU

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQI6N15TU Datasheet (PDF)

 ..1. Size:759K  fairchild semi
 fqb6n15tm fqi6n15tu.pdf pdf_icon

FQI6N15TU

May 2000TMQFETQFETQFETQFETFQB6N15 / FQI6N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 9.6 pF)This advanced technology h

 9.1. Size:729K  fairchild semi
 fqb6n40ctm fqi6n40ctu.pdf pdf_icon

FQI6N15TU

TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 9.2. Size:681K  fairchild semi
 fqb6n60ctm fqi6n60ctu.pdf pdf_icon

FQI6N15TU

QFETFQB6N60C / FQI6N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 7 pF)This advanced technology has been especially tailored to

 9.3. Size:1075K  fairchild semi
 fqb6n80 fqi6n80.pdf pdf_icon

FQI6N15TU

October 2008QFETFQB6N80 / FQI6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially

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Другие MOSFET... FQI5N20LTU , FQI5N20TU , FQI5N30TU , FQI5N40TU , FQI5N50CTU , FQI5N60CTU , FQI5N80TU , FQI5P10TU , IRLZ44N , FQI6N40CTU , FQI6N50TU , FQI6N60CTU , FQI7N10LTU , FQI7N10TU , FQI7N60TU , FQI7N80TU , FQI8N60CTU .

History: 2SK2084STL-E | STG8205 | TSF840MR | SLH60R080SS | IRFY340CM

 

 
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