FQI6N40CTU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQI6N40CTU
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 73 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 65 ns
Cossⓘ - Выходная емкость: 80 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: I2-PAK
Аналог (замена) для FQI6N40CTU
FQI6N40CTU Datasheet (PDF)
fqb6n40ctm fqi6n40ctu.pdf
TMQFETFQB6N40C/FQI6N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to
fqb6n15tm fqi6n15tu.pdf
May 2000TMQFETQFETQFETQFETFQB6N15 / FQI6N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 9.6 pF)This advanced technology h
fqb6n60ctm fqi6n60ctu.pdf
QFETFQB6N60C / FQI6N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 7 pF)This advanced technology has been especially tailored to
fqb6n80 fqi6n80.pdf
October 2008QFETFQB6N80 / FQI6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially
fqb6n50 fqi6n50tu.pdf
April 2000TMQFETQFETQFETQFETFQB6N50 / FQI6N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 500V, RDS(on) = 1.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918