FQI7N10LTU - Даташиты. Аналоги. Основные параметры
Наименование производителя: FQI7N10LTU
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 55 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: I2-PAK
Аналог (замена) для FQI7N10LTU
FQI7N10LTU Datasheet (PDF)
fqb7n10ltm fqi7n10ltu.pdf

December 2000TMQFETQFETQFETQFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced
fqi7n10tu.pdf

December 2000TMQFETQFETQFETQFETFQB7N10 / FQI7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technolo
fqb7n80tm am002 fqi7n80tu fqi7n80 fqb7n80.pdf

October 2008QFETFQB7N80 / FQI7N80800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been especially
fqb7n60tm fqb7n60 fqi7n60 fqi7n60tu.pdf

October 2008QFETFQB7N60 / FQI7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially
Другие MOSFET... FQI5N50CTU , FQI5N60CTU , FQI5N80TU , FQI5P10TU , FQI6N15TU , FQI6N40CTU , FQI6N50TU , FQI6N60CTU , IRFP250 , FQI7N10TU , FQI7N60TU , FQI7N80TU , FQI8N60CTU , FQI8P10TU , FQI9N08LTU , FQI9N08TU , FQI9N15TU .
History: AP9412AGI | BL5N50-U | VBM165R18 | NTMFS5C450NLT3G | FQI5P10TU | AP9410AGH-HF | STI150N10F7
History: AP9412AGI | BL5N50-U | VBM165R18 | NTMFS5C450NLT3G | FQI5P10TU | AP9410AGH-HF | STI150N10F7



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