FQN1N60CTA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQN1N60CTA
Маркировка: 1N60C
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 0.3 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.8 nC
Время нарастания (tr): 21 ns
Выходная емкость (Cd): 19 pf
Сопротивление сток-исток открытого транзистора (Rds): 11.5 Ohm
Тип корпуса: TO-92
Аналог (замена) для FQN1N60CTA
FQN1N60CTA Datasheet (PDF)
fqn1n60cbu fqn1n60cta.pdf
QFETFQN1N60C 600V N-Channel MOSFETFeatures Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF)minimi
fqn1n60c.pdf
QFETFQN1N60C 600V N-Channel MOSFETFeatures Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF)minimi
fqn1n60c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqn1n50cbu fqn1n50cta.pdf
January 2006QFETFQN1N50C 500V N-Channel MOSFETFeatures Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.9 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typica
fqn1n50c.pdf
January 2006QFETFQN1N50C 500V N-Channel MOSFETFeatures Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.9 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typica
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
