FQP11N50CF. Аналоги и основные параметры

Наименование производителя: FQP11N50CF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 195 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 70 ns

Cossⓘ - Выходная емкость: 185 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm

Тип корпуса: TO-220

Аналог (замена) для FQP11N50CF

- подборⓘ MOSFET транзистора по параметрам

 

FQP11N50CF даташит

 ..1. Size:1291K  fairchild semi
 fqp11n50cf fqp11n50cf fqpf11n50cf.pdf pdf_icon

FQP11N50CF

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tai

 8.1. Size:1216K  fairchild semi
 fqp11n40c fqpf11n40c.pdf pdf_icon

FQP11N50CF

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially

 8.2. Size:699K  fairchild semi
 fqp11n40.pdf pdf_icon

FQP11N50CF

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.4A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has bee

 9.1. Size:926K  fairchild semi
 fqp11p06.pdf pdf_icon

FQP11N50CF

November 2013 FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 m Description Features These P-Channel enhancement mode power field effect -11.4 A, -60 V, RDS(on) = 175 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -5.7 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 13 nC) technology has been especially ta

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