Справочник MOSFET. FQP5N20L

 

FQP5N20L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQP5N20L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 90 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для FQP5N20L

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQP5N20L Datasheet (PDF)

 ..1. Size:606K  fairchild semi
fqp5n20l.pdfpdf_icon

FQP5N20L

August 2001TMQFETFQP5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially

 7.1. Size:677K  fairchild semi
fqp5n20.pdfpdf_icon

FQP5N20L

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been

 9.1. Size:858K  fairchild semi
fqp5n60c fqpf5n60c fqpf5n60cydtu.pdfpdf_icon

FQP5N20L

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 9.2. Size:879K  fairchild semi
fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdfpdf_icon

FQP5N20L

TMQFETFQP5N50C/FQPF5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

Другие MOSFET... FQP4N25 , FQP4N50 , FQP4N60 , FQP4N90 , FQP4P25 , FQP55N06 , FQP58N08 , FQP5N20 , IRFP250N , FQP5N30 , FQP5N40 , FQP5N50C , FQP5N80 , FQP5N90 , FQP5P10 , FQP5P20 , FQP630TSTU .

History: CSD16322Q5 | 2SK3019 | VS3628GA

 

 
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