FQP5N80 - аналоги и даташиты транзистора

 

FQP5N80 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQP5N80
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.6 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для FQP5N80

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQP5N80 Datasheet (PDF)

 ..1. Size:659K  fairchild semi
 fqp5n80.pdf pdf_icon

FQP5N80

September 2000TMQFETFQP5N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailor

 9.1. Size:858K  fairchild semi
 fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf pdf_icon

FQP5N80

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 9.2. Size:879K  fairchild semi
 fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf pdf_icon

FQP5N80

TMQFETFQP5N50C/FQPF5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 9.3. Size:744K  fairchild semi
 fqp5n30.pdf pdf_icon

FQP5N80

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been es

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Другие MOSFET... FQP4P25 , FQP55N06 , FQP58N08 , FQP5N20 , FQP5N20L , FQP5N30 , FQP5N40 , FQP5N50C , STP75NF75 , FQP5N90 , FQP5P10 , FQP5P20 , FQP630TSTU , FQP6N15 , FQP6N25 , FQP6N50 , FQP6N50C .

History: 1N65G-T92-B | 1N60L-TND-R | 1N60G-TMS-T | 20N70KG-TF2-T | 24NM60L-TF2-T | SI3403 | G120N04

 

 
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