IRF540NSPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF540NSPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 130 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 33 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 71 nC
Время нарастания (tr): 35 ns
Выходная емкость (Cd): 250 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.044 Ohm
Тип корпуса: TO-263
Аналог (замена) для IRF540NSPBF
IRF540NSPBF Datasheet (PDF)
irf540nlpbf irf540nspbf.pdf
PD - 95130IRF540NSPbFIRF540NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from ID = 33AInternational Rectifier utilize advanced processing Stechniques to achi
irf540ns.pdf
PD - 91342IRF540NSIRF540NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely low on-r
irf540ns irf540nl.pdf
PD - 91342BIRF540NSIRF540NLl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely l
irf540ns.pdf
SMD Type MOSFETN-Channel MOSFETIRF540NS (KRF540NS)TO-263Unit:mm 9.65 (Min)10.67 (Max) Features5.33 (Min) VDS (V) = 100V 90 ~ 93 ID = 33 A (VGS = 10V) RDS(ON) 44m (VGS = 10V)6.22 (min) Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max)1.65 (max)D1.27~1.781.14~1.400.43~0.63G 1 Gate0.51~0.992 Drain 2.543 Sour
irf540ns irf540n.pdf
IRF540N/NS100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) TO-263 Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking IRF540N TO-220 IRF540N IRF540NS TO-263 IRF540NS Absolute Maxim
irf540nstrpbf.pdf
IRF540NSTRPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDD2PAK (TO-263)GDGSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,
irf540ns.pdf
Isc N-Channel MOSFET Transistor IRF540NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
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