IRF5N3205 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF5N3205
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 170 nC
trⓘ - Время нарастания: 300 ns
Cossⓘ - Выходная емкость: 1200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: SMD1
IRF5N3205 Datasheet (PDF)
irf5n3205.pdf
PD-94302BHEXFET POWER MOSFET IRF5N3205SURFACE MOUNT (SMD-1)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5N3205 55V 0.008 55A*Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast s
irf5n3710.pdf
PD - 94235AHEXFET POWER MOSFET IRF5N3710SURFACE MOUNT (SMD-1)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 100V 0.028 45A IRF5N3710Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5n3415.pdf
PD - 94267HEXFET POWER MOSFET IRF5N3415SURFACE MOUNT (SMD-1)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 150V 0.042 37.5A IRF5N3415Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5nj3315.pdf
PD-94287BHEXFET POWER MOSFET IRF5NJ3315SURFACE MOUNT (SMD-0.5)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5njz48.pdf
PD - 94034IRF5NJZ48HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ48 55V 0.016 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa
irf5nj9540.pdf
PD - 94038AHEXFET POWER MOSFET IRF5NJ9540SURFACE MOUNT (SMD-0.5)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with
irf5n4905.pdf
PD - 94163HEXFET POWER MOSFET IRF5N4905SURFACE MOUNT (SMD-1)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID -55V 0.024 -55A* IRF5N4905Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5n5210.pdf
PD-94154AHEXFET POWER MOSFET IRF5N5210SURFACE MOUNT (SMD-1)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5N5210 -100V 0.060 -31AFifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with then L
irf5nj5305.pdf
PD - 94033HEXFET POWER MOSFET IRF5NJ5305SURFACE MOUNT (SMD-0.5)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 -22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with th
irf5njz34.pdf
PD - 94600IRF5NJZ34HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ34 55V 0.04 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:fast
irf5nj540.pdf
PD - 94020AIRF5NJ540HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJ540 100V 0.052 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:
irf5nj6215.pdf
PD - 94284AHEXFET POWER MOSFET IRF5NJ6215SURFACE MOUNT (SMD-0.5)150V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ6215 -150V 0.29 -11AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t
smirf5n65.pdf
SMIRF5N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 5A SMIRF5N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.3(VGS=10V, ID=2.5A) on-state resistance, provide superior
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NTD4858N-1G | NTD5865N
History: NTD4858N-1G | NTD5865N
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918