IRF5N3205 - описание и поиск аналогов

PD-94302B HEXFET POWER MOSFET IRF5N3205 SURFACE MOUNT (SMD-1) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N3205 55V 0.008 55A* Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fast s

PD - 94235A HEXFET POWER MOSFET IRF5N3710 SURFACE MOUNT (SMD-1) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 100V 0.028 45A IRF5N3710 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

PD - 94267 HEXFET POWER MOSFET IRF5N3415 SURFACE MOUNT (SMD-1) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID 150V 0.042 37.5A IRF5N3415 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

PD-94287B HEXFET POWER MOSFET IRF5NJ3315 SURFACE MOUNT (SMD-0.5) 150V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

PD - 94034 IRF5NJZ48 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ48 55V 0.016 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fa

PD - 94038A HEXFET POWER MOSFET IRF5NJ9540 SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with

PD - 94163 HEXFET POWER MOSFET IRF5N4905 SURFACE MOUNT (SMD-1) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID -55V 0.024 -55A* IRF5N4905 Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the

PD-94154A HEXFET POWER MOSFET IRF5N5210 SURFACE MOUNT (SMD-1) 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N5210 -100V 0.060 -31A Fifth Generation HEXFET power MOSFETs from SMD-1 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with the n L

PD - 94033 HEXFET POWER MOSFET IRF5NJ5305 SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 -22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with th

PD - 94600 IRF5NJZ34 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 55V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ34 55V 0.04 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fast

PD - 94020A IRF5NJ540 HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ540 100V 0.052 22A* Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features

PD - 94284A HEXFET POWER MOSFET IRF5NJ6215 SURFACE MOUNT (SMD-0.5) 150V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5NJ6215 -150V 0.29 -11A Fifth Generation HEXFET power MOSFETs from SMD-0.5 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance Features per silicon unit area. This benefit, combined with t

SMIRF5N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 5A SMIRF5N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.3 (VGS=10V, ID=2.5A) on-state resistance, provide superior