PD - 94163HEXFET POWER MOSFET IRF5N4905SURFACE MOUNT (SMD-1)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID -55V 0.024 -55A* IRF5N4905Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

PD-94287BHEXFET POWER MOSFET IRF5NJ3315SURFACE MOUNT (SMD-0.5)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

PD - 94034IRF5NJZ48HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ48 55V 0.016 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa

PD - 94038AHEXFET POWER MOSFET IRF5NJ9540SURFACE MOUNT (SMD-0.5)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with

PD-94154AHEXFET POWER MOSFET IRF5N5210SURFACE MOUNT (SMD-1)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5N5210 -100V 0.060 -31AFifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with then L

PD - 94033HEXFET POWER MOSFET IRF5NJ5305SURFACE MOUNT (SMD-0.5)55V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ5305 -55V 0.065 -22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with th

PD - 94235AHEXFET POWER MOSFET IRF5N3710SURFACE MOUNT (SMD-1)100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 100V 0.028 45A IRF5N3710Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

PD - 94600IRF5NJZ34HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ34 55V 0.04 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:fast

PD - 94020AIRF5NJ540HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJ540 100V 0.052 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:

PD-94302BHEXFET POWER MOSFET IRF5N3205SURFACE MOUNT (SMD-1)55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5N3205 55V 0.008 55A*Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast s

PD - 94284AHEXFET POWER MOSFET IRF5NJ6215SURFACE MOUNT (SMD-0.5)150V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ6215 -150V 0.29 -11AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with t

PD - 94267HEXFET POWER MOSFET IRF5N3415SURFACE MOUNT (SMD-1)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID 150V 0.042 37.5A IRF5N3415Fifth Generation HEXFET power MOSFETs fromSMD-1International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the

SMIRF5N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 5A SMIRF5N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.3(VGS=10V, ID=2.5A) on-state resistance, provide superior