IRF5NJZ48 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRF5NJZ48
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 141 ns
Cossⓘ - Выходная емкость: 620 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: SMD-0.5
- подбор MOSFET транзистора по параметрам
IRF5NJZ48 Datasheet (PDF)
irf5njz48.pdf

PD - 94034IRF5NJZ48HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ48 55V 0.016 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa
irf5njz34.pdf

PD - 94600IRF5NJZ34HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ34 55V 0.04 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:fast
irf5nj3315.pdf

PD-94287BHEXFET POWER MOSFET IRF5NJ3315SURFACE MOUNT (SMD-0.5)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5nj9540.pdf

PD - 94038AHEXFET POWER MOSFET IRF5NJ9540SURFACE MOUNT (SMD-0.5)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: APT10078BFLLG | AP2306CGN-HF | HGB480N15M | JANSR2N7396 | 2SK3647-01 | EMB03N03HR | PSMN5R8-40YS
History: APT10078BFLLG | AP2306CGN-HF | HGB480N15M | JANSR2N7396 | 2SK3647-01 | EMB03N03HR | PSMN5R8-40YS



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