IRF5NJZ48 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRF5NJZ48
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 141 ns
Cossⓘ - Выходная емкость: 620 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: SMD-0.5
Аналог (замена) для IRF5NJZ48
IRF5NJZ48 Datasheet (PDF)
irf5njz48.pdf

PD - 94034IRF5NJZ48HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ48 55V 0.016 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fa
irf5njz34.pdf

PD - 94600IRF5NJZ34HEXFET POWER MOSFETSURFACE MOUNT (SMD-0.5) 55V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF5NJZ34 55V 0.04 22A*Fifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with the Features:fast
irf5nj3315.pdf

PD-94287BHEXFET POWER MOSFET IRF5NJ3315SURFACE MOUNT (SMD-0.5)150V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ3315 150V 0.08 20AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with the
irf5nj9540.pdf

PD - 94038AHEXFET POWER MOSFET IRF5NJ9540SURFACE MOUNT (SMD-0.5)100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRF5NJ9540 -100V 0.117 -18AFifth Generation HEXFET power MOSFETs fromSMD-0.5International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceFeatures:per silicon unit area. This benefit, combined with
Другие MOSFET... IRF5N4905 , IRF5N5210 , IRF5NJ3315 , IRF5NJ5305 , IRF5NJ540 , IRF5NJ6215 , IRF5NJ9540 , IRF5NJZ34 , 2SK3918 , IRF5Y1310CM , IRF5Y31N20 , IRF5Y3315CM , IRF5Y3710CM , IRF5Y5305CM , IRF5Y540CM , IRF5Y6215CM , IRF5Y9540CM .
History: AP80SL650AI | 2SK3604-01S
History: AP80SL650AI | 2SK3604-01S



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