FQP7N10 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQP7N10
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 60 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TO-220
Аналог (замена) для FQP7N10
FQP7N10 Datasheet (PDF)
fqp7n10.pdf

December 2000TMQFETQFETQFETQFETFQP7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is espe
fqp7n10l.pdf

December 2000TMQFETQFETQFETQFETFQP7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology
fqp7n65c fqpf7n65c.pdf

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
fqp7n60.pdf

April 2000TMQFETQFETQFETQFETFQP7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been esp
Другие MOSFET... IRF620PBF , IRF620SPBF , IRF6215LPBF , IRF6215PBF , IRF6215SPBF , FQP6N90 , FQP6P25 , FQP70N08 , IRFB4227 , FQP7N10L , FQP7N20 , FQP7N20L , FQP7N40 , FQP7N60 , FQP7N65C , FQP7N80 , FQP7P20 .
History: IRFS4127 | 2N4393C1C | FQB3N60CTM | STH410N4F7-6AG | UT75N03 | SRC65R042B | TK14N65W
History: IRFS4127 | 2N4393C1C | FQB3N60CTM | STH410N4F7-6AG | UT75N03 | SRC65R042B | TK14N65W



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