Справочник MOSFET. FQP7N20

 

FQP7N20 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQP7N20
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.69 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для FQP7N20

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQP7N20 Datasheet (PDF)

 ..1. Size:664K  fairchild semi
 fqp7n20.pdf pdf_icon

FQP7N20

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been

 ..2. Size:664K  onsemi
 fqp7n20.pdf pdf_icon

FQP7N20

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been

 0.1. Size:557K  fairchild semi
 fqp7n20l.pdf pdf_icon

FQP7N20

December 2000TMQFETQFETQFETQFETFQP7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology

 9.1. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQP7N20

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

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Другие MOSFET... IRF6215LPBF , IRF6215PBF , IRF6215SPBF , FQP6N90 , FQP6P25 , FQP70N08 , FQP7N10 , FQP7N10L , IRFP250N , FQP7N20L , FQP7N40 , FQP7N60 , FQP7N65C , FQP7N80 , FQP7P20 , FQP90N10V2 , FQP9N08 .

History: IRF7530 | EMB12P03G | EMB20N03V | STC3116E | SMK0460IS | STS8202 | BL20N50-A

 

 
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