IRFZ22 - параметры транзистора MOSFET, его аналоги, datasheet

IRFZ22 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: IRFZ22
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 17(max) nC
   tr ⓘ - Время нарастания: 90(max) ns
   Cossⓘ - Выходная емкость: 350(max) pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO220

Аналог (замена) для IRFZ22

- подбор ⓘ MOSFET транзистора по параметрам

IRFZ22 Datasheet (PDF)

0.1. Size:489K st
irfz20 irfz22-fi.pdf pdf_icon

9.1. Size:42K 1
irfz12 irfz15 irfz25 irfz35 irfz45.pdf pdf_icon

9.2. Size:43K international rectifier
irfz1x irfz2x irfz3x irfz4x.pdf pdf_icon

9.3. Size:359K international rectifier
irfz24s.pdf pdf_icon

PD - 9.891AIRFZ24S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10 Fast SwitchingGID = 17ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

9.4. Size:675K international rectifier
irfz24nlpbf.pdf pdf_icon

PD - 95147IRFZ24NS/LPbFHEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS)DVDSS = 55V Low-profile through-hole (IRFZ24NL) 175C Operating TemperatureRDS(on) = 0.07 Fast SwitchingG Fully Avalanche Rated Lead-Free ID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

9.5. Size:159K international rectifier
irfz24ns.pdf pdf_icon

PD - 9.1355BIRFZ24NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature RDS(on) = 0.07 Fast SwitchingG Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

9.6. Size:193K international rectifier
irfz24s irfz24l.pdf pdf_icon

9.7. Size:123K international rectifier
irfz24n.pdf pdf_icon

PD - 91354AIRFZ24NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescriptionID = 17ASFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper sili

9.8. Size:123K international rectifier
irfz24vs.pdf pdf_icon

PD - 94182IRFZ24VSIRFZ24VLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 60m Fast SwitchingG Fully Avalanche RatedID = 17A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techn

9.9. Size:53K international rectifier
irfz24n 1.pdf pdf_icon

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 17 Afeatures very low on-s

9.10. Size:166K international rectifier
irfz24.pdf pdf_icon

9.11. Size:200K international rectifier
irfz24v.pdf pdf_icon

PD - 94156IRFZ24VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 60mG Fast Switching Fully Avalanche RatedID = 17A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ach

9.12. Size:242K international rectifier
irfz24npbf.pdf pdf_icon

IRFZ24NPbF l Advanced Process TechnologyDl Dynamic dv/dt Ratingl 175C Operating Temperature DSS l Fast Switchingl Fully Avalanche Rated DS(on) Gl Lead-FreeDescription D SFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the lowest possible on-res

9.13. Size:672K international rectifier
irfz24nspbf.pdf pdf_icon

9.14. Size:53K philips
irfz24n 1.pdf pdf_icon

9.15. Size:494K samsung
irfz24a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

9.16. Size:1837K vishay
irfz20pbf sihfz20.pdf pdf_icon

IRFZ20, SiHFZ20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Extremely Low RDS(on)VDS (V) 50 Compact Plastic PackageRDS(on) ()VGS = 10 V 0.10 Fast SwitchingQg (Max.) (nC) 17 Low Drive CurrentQgs (nC) 9.0 Ease of ParallelingQgd (nC) 3.0 Excellent Temperature StabilityConfiguration Single Parts Per Million Quality Compliant to R

9.17. Size:1229K vishay
irfz24pbf sihfz24.pdf pdf_icon

IRFZ24, SiHFZ24Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.10 Fast SwitchingQg (Max.) (nC) 25 Ease of ParallelingQgs (nC) 5.8Qgd (nC) 11 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio

9.18. Size:448K vishay
irfz24l irfz24s irfz24spbf sihfz24s.pdf pdf_icon

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.10 Surface Mount (IRFZ24S, SiHFZ24S)Qg (Max.) (nC) 25 Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) 175 C Operating TemperatureQgs (nC) 5.8 Fast Sw

9.19. Size:348K vishay
irfz24 sihfz24.pdf pdf_icon

IRFZ24, SiHFZ24www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 175 C operating temperatureRDS(on) ()VGS = 10 V 0.10 Fast switchingQg max. (nC) 25 Ease of parallelingQgs (nC) 5.8Qgd (nC) 11 Simple drive requirementsConfiguration Single Material categorization: for definitions of compliance

9.20. Size:641K infineon
auirfz24ns auirfz24nl.pdf pdf_icon

AUIRFZ24NS AUTOMOTIVE GRADE AUIRFZ24NL HEXFET Power MOSFET Features Advanced Planar Technology VDSS 55V Low On-Resistance Dynamic dV/dT and dI/dT capability 175C Operating Temperature RDS(on) max. 0.07 Fast Switching Fully Avalanche Rated ID 17A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D

9.21. Size:2064K cn vbsemi
irfz24ns.pdf pdf_icon

IRFZ24NSwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

9.22. Size:410K cn haohai electr
hirfz24np hirfz24nf.pdf pdf_icon

IRFZ24NN-Channel MOSFET20A, 55V, N H IRFZ24N HIRFZ24NP HAOHAI P:TO-220AB 50Pcs 1000Pcs 5000Pcs,IRFZ24F HIRFZ24NF HAOHAI F:TO-220FP 50Pcs 1000Pcs 5000Pcs,IRFZ24N Series Pin AssignmentID=20A

9.23. Size:214K inchange semiconductor
irfz24nlpbf.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NLPbFFEATURESWith TO-262(DPAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

9.24. Size:203K inchange semiconductor
irfz24nspbf.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ24NSPbFFEATURESWith TO-263(D2PAK) packagingSurface mountHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .