Справочник MOSFET. FQPF17P10

 

FQPF17P10 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF17P10
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10.5 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 200 ns
   Cossⓘ - Выходная емкость: 310 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для FQPF17P10

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQPF17P10 Datasheet (PDF)

 ..1. Size:664K  fairchild semi
fqpf17p10.pdfpdf_icon

FQPF17P10

TMQFETFQPF17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -10.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

 7.1. Size:674K  fairchild semi
fqpf17p06.pdfpdf_icon

FQPF17P10

May 2001TMQFETFQPF17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.12 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially tailored

 8.1. Size:723K  fairchild semi
fqpf17n40t.pdfpdf_icon

FQPF17P10

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 8.2. Size:600K  fairchild semi
fqpf17n08.pdfpdf_icon

FQPF17P10

January 2001TMQFETQFETQFETQFETFQPF17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technology has bee

Другие MOSFET... FQPF13N50T , FQPF14N15 , FQPF14N30 , FQPF16N25 , FQPF17N08 , FQPF17N08L , FQPF17N40T , FQPF17P06 , P0903BDG , FQPF18N20V2 , FQPF18N50V2 , FQPF19N10L , FQPF19N20CYDTU , FQPF19N20T , FQPF1N50 , FQPF1N60 , FQPF1N60T .

History: STP19NM50N | WTX1012 | IRLHS6242

 

 
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