Справочник MOSFET. FQPF2N40

 

FQPF2N40 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF2N40
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 16 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 20 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5.8 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для FQPF2N40

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQPF2N40 Datasheet (PDF)

 ..1. Size:725K  fairchild semi
fqpf2n40.pdfpdf_icon

FQPF2N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.1A, 400V, RDS(on) = 5.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has bee

 8.1. Size:732K  fairchild semi
fqpf2n30.pdfpdf_icon

FQPF2N40

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been

 8.2. Size:726K  fairchild semi
fqpf2n90.pdfpdf_icon

FQPF2N40

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has be

 8.3. Size:1366K  fairchild semi
fqp2n60c fqpf2n60c.pdfpdf_icon

FQPF2N40

April 2006QFETFQP2N60C/FQPF2N60C2.0A, 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC)planar stripe, DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tailo

Другие MOSFET... FQPF1N50 , FQPF1N60 , FQPF1N60T , FQPF1P50 , FQPF27N25T , FQPF28N15 , FQPF28N15T , FQPF2N30 , K2611 , FQPF2N50 , FQPF2N60 , FQPF2N90 , FQPF2NA90 , FQPF2P25 , FQPF2P40 , FQPF30N06 , FQPF32N12V2 .

History: SMK0260I | NP90N04NDH

 

 
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