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FQPF44N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQPF44N10
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 48 nC
   trⓘ - Время нарастания: 190 ns
   Cossⓘ - Выходная емкость: 425 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для FQPF44N10

 

 

FQPF44N10 Datasheet (PDF)

 ..1. Size:568K  fairchild semi
fqpf44n10.pdf

FQPF44N10 FQPF44N10

December 2000TMQFETQFETQFETQFETFQPF44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 27A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is esp

 7.1. Size:668K  fairchild semi
fqpf44n08 fqpf44n08t.pdf

FQPF44N10 FQPF44N10

August 2000TMQFETQFETQFETQFETFQPF44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been e

 9.1. Size:549K  fairchild semi
fqpf4n60.pdf

FQPF44N10 FQPF44N10

April 2000TMQFETQFETQFETQFETFQPF4N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.6A, 600V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced technology has been e

 9.2. Size:703K  fairchild semi
fqpf47p06.pdf

FQPF44N10 FQPF44N10

May 2001TMQFETFQPF47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailore

 9.3. Size:739K  fairchild semi
fqpf4n25.pdf

FQPF44N10 FQPF44N10

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been

 9.4. Size:636K  fairchild semi
fqpf4p40.pdf

FQPF44N10 FQPF44N10

August 2000TMQFETQFETQFETQFETFQPF4P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.4A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has bee

 9.5. Size:899K  fairchild semi
fqp4n90c fqpf4n90c.pdf

FQPF44N10 FQPF44N10

TMQFETFQP4N90C/FQPF4N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC)planar stripe, DMOS technology. Low Crss ( typical 5.6 pF)This advanced technology has been especially tailored to

 9.6. Size:701K  fairchild semi
fqpf47p06ydtu.pdf

FQPF44N10 FQPF44N10

May 2001TMQFETFQPF47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especially tailore

 9.7. Size:622K  fairchild semi
fqpf4n90.pdf

FQPF44N10 FQPF44N10

October 2001TMQFETFQPF4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been especially

 9.8. Size:638K  fairchild semi
fqpf4n80.pdf

FQPF44N10 FQPF44N10

September 2000TMQFETFQPF4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially tail

 9.9. Size:747K  fairchild semi
fqpf46n15.pdf

FQPF44N10 FQPF44N10

April 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.6A, 150V, RDS(on) = 0.042 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has b

 9.10. Size:541K  fairchild semi
fqpf4n20l.pdf

FQPF44N10 FQPF44N10

December 2000TMQFETQFETQFETQFETFQPF4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technolog

 9.11. Size:715K  fairchild semi
fqpf4n20.pdf

FQPF44N10 FQPF44N10

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been

 9.12. Size:954K  fairchild semi
fqp45n15v2 fqpf45n15v2.pdf

FQPF44N10 FQPF44N10

QFETFQP45N15V2/FQPF45N15V2150V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 45A, 150V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 72 nC)planar stripe, DMOS technology. Low Crss ( typical 135 pF)This advanced technology has been especially tailor

 9.13. Size:718K  fairchild semi
fqpf4n50.pdf

FQPF44N10 FQPF44N10

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been

 9.14. Size:1337K  onsemi
fqp4n90c fqpf4n90c.pdf

FQPF44N10 FQPF44N10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.15. Size:935K  onsemi
fqpf47p06 fqpf47p06ydtu.pdf

FQPF44N10 FQPF44N10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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