Справочник MOSFET. FQPF5P10

 

FQPF5P10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQPF5P10
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 23 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.9 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 6.3 nC
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.05 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для FQPF5P10

 

 

FQPF5P10 Datasheet (PDF)

 ..1. Size:659K  fairchild semi
fqpf5p10.pdf

FQPF5P10
FQPF5P10

TMQFETFQPF5P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.9A, -100V, RDS(on) = 1.05 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailored to

 8.1. Size:508K  fairchild semi
fqpf5p20rdtu.pdf

FQPF5P10
FQPF5P10

August 2014FQPF5P20P-Channel QFET MOSFET-200 V, -3.4 A, 1.4 Description FeaturesThis P-Channel enhancement mode power MOSFET is -3.4 A, -200 V, RDS(on) = 1.4 (Max.) @ VGS = -10 V, produced using Fairchild Semiconductors proprietary ID = -1.7 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 10 nC)MOSFET technology has been especially tai

 8.2. Size:610K  fairchild semi
fqpf5p20.pdf

FQPF5P10
FQPF5P10

May 2000TMQFETQFETQFETQFETFQPF5P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -3.4A, -200V, RDS(on) = 1.4 @VGS = -10 VThis advanced technology has been especially tailored to Low gate charge ( typical 10 nC)minim

 9.1. Size:858K  fairchild semi
fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf

FQPF5P10
FQPF5P10

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 9.2. Size:556K  fairchild semi
fqpf5n20l.pdf

FQPF5P10
FQPF5P10

December 2000TMQFETQFETQFETQFETFQPF5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 9.3. Size:758K  fairchild semi
fqpf5n30.pdf

FQPF5P10
FQPF5P10

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been e

 9.4. Size:879K  fairchild semi
fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf

FQPF5P10
FQPF5P10

TMQFETFQP5N50C/FQPF5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

 9.5. Size:728K  fairchild semi
fqpf5n40.pdf

FQPF5P10
FQPF5P10

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been

 9.6. Size:743K  fairchild semi
fqpf5n15.pdf

FQPF5P10
FQPF5P10

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been e

 9.7. Size:670K  fairchild semi
fqpf50n06l.pdf

FQPF5P10
FQPF5P10

May 2001TMQFETFQPF50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32.6A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been especially

 9.8. Size:628K  fairchild semi
fqpf50n06.pdf

FQPF5P10
FQPF5P10

May 2001TMQFETFQPF50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to

 9.9. Size:1159K  fairchild semi
fqpf5n60c.pdf

FQPF5P10
FQPF5P10

December 2013FQP5N60C / FQPF5N60CN-Channel QFET MOSFET600 V, 4.5 A, 2.5 Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 2.25 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 15 nC)technology has been

 9.10. Size:710K  fairchild semi
fqpf5n20.pdf

FQPF5P10
FQPF5P10

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been

 9.11. Size:657K  fairchild semi
fqpf5n50cf fqpf5n50cftu.pdf

FQPF5P10
FQPF5P10

TMFRFETFQPF5N50CF 500V N-Channel MOSFETFeatures Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 18nC)DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to mini- F

 9.12. Size:624K  fairchild semi
fqpf5n60.pdf

FQPF5P10
FQPF5P10

TMQFETFQPF5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been especially tailored to Fas

 9.13. Size:665K  fairchild semi
fqpf5n90.pdf

FQPF5P10
FQPF5P10

September 2000TMQFETQFETQFETQFETFQPF5N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 900V, RDS(on) = 2.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has b

 9.14. Size:750K  fairchild semi
fqpf5n50.pdf

FQPF5P10
FQPF5P10

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been

 9.15. Size:652K  fairchild semi
fqpf55n10.pdf

FQPF5P10
FQPF5P10

August 2000TMQFETQFETQFETQFETFQPF55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 34.2A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has b

 9.16. Size:650K  fairchild semi
fqpf5n80.pdf

FQPF5P10
FQPF5P10

September 2000TMQFETFQPF5N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailo

 9.17. Size:979K  onsemi
fqp5n50c fqpf5n50c.pdf

FQPF5P10
FQPF5P10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 9.18. Size:839K  onsemi
fqp5n60c fqpf5n60c.pdf

FQPF5P10
FQPF5P10

TMQFETFQP5N60C/FQPF5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored t

 9.19. Size:202K  inchange semiconductor
fqpf50n06.pdf

FQPF5P10
FQPF5P10

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQPF50N06FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIM

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