Справочник MOSFET. FQPF6N25

 

FQPF6N25 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF6N25
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для FQPF6N25

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQPF6N25 Datasheet (PDF)

 ..1. Size:723K  fairchild semi
fqpf6n25.pdfpdf_icon

FQPF6N25

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been e

 8.1. Size:858K  fairchild semi
fqpf6n90ct.pdfpdf_icon

FQPF6N25

TMQFETFQP6N90C/FQPF6N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

 8.2. Size:733K  fairchild semi
fqpf6n15.pdfpdf_icon

FQPF6N25

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 150V, RDS(on) = 0.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 9.6 pF)This advanced technology has been e

 8.3. Size:850K  fairchild semi
fqpf6n40ct fqpf6n40c fqpf6n40cf.pdfpdf_icon

FQPF6N25

TMQFETFQP6N40C/FQPF6N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

Другие MOSFET... FQPF5N50CT , FQPF5N50CTTU , FQPF5N50CYDTU , FQPF5N60 , FQPF5N60CYDTU , FQPF5N80 , FQPF5P10 , FQPF6N15 , STP75NF75 , FQPF6N40C , FQPF6N40CF , FQPF6N40CT , FQPF6N50 , FQPF6N60 , FQPF6N60C , FQPF6N70 , FQPF6N80 .

History: SMIRF18N50T8TL | CS730A8RD | SVD640F | AFN1912 | AOD538 | PNMTO600V2 | SI2347DS

 

 
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