FQPF6N60C - описание и поиск аналогов

 ..1. Size:931K  fairchild semi
 fqp6n60c fqp6n60c fqpf6n60c fqpf6n60c.pdf 

QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

 ..2. Size:1046K  onsemi
 fqp6n60c fqpf6n60c.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:921K  cn vbsemi
 fqpf6n60c.pdf 

FQPF6N60C www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 2.1 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS

 6.1. Size:542K  fairchild semi
 fqpf6n60.pdf 

April 2000 TM QFET QFET QFET QFET FQPF6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 600V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been es

 8.1. Size:858K  fairchild semi
 fqpf6n90ct.pdf 

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

 8.2. Size:733K  fairchild semi
 fqpf6n15.pdf 

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.0A, 150V, RDS(on) = 0.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 9.6 pF) This advanced technology has been e

 8.3. Size:850K  fairchild semi
 fqpf6n40ct fqpf6n40c fqpf6n40cf.pdf 

 8.4. Size:1088K  fairchild semi
 fqp6n40cf fqpf6n40cf.pdf 

February 2006 TM FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description 6A, 400V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 16nC) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typi

 8.5. Size:860K  fairchild semi
 fqp6n90c fqpf6n90c.pdf 

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

 8.6. Size:664K  fairchild semi
 fqpf6n80.pdf 

September 2000 TM QFET FQPF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tail

 8.7. Size:758K  fairchild semi
 fqpf6n50.pdf 

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 500V, RDS(on) = 1.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been

 8.8. Size:558K  fairchild semi
 fqpf6n70.pdf 

December 2000 TM QFET QFET QFET QFET FQPF6N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.5A, 700V, RDS(on) = 1.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology is esp

 8.9. Size:600K  fairchild semi
 fqpf6n90.pdf 

QFET N-CHANNEL FQPF6N90 FEATURES BVDSS = 900V Advanced New Design RDS(ON) = 1.9 Avalanche Rugged Technology ID = 3.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics TO-220F Unrivalled Gate Charge 40nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 1.5 (Typ.) 1 2 3 1. Gate 2. Drain 3. Sou

 8.10. Size:723K  fairchild semi
 fqpf6n25.pdf 

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.0A, 250V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been e

 8.11. Size:1001K  fairchild semi
 fqpf6n80t.pdf 

TM QFET FQPF6N80T 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to

 8.12. Size:889K  fairchild semi
 fqp6n80c fqpf6n80c.pdf 

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

 8.13. Size:851K  fairchild semi
 fqp6n40c fqpf6n40c.pdf 

 8.14. Size:1255K  onsemi
 fqp6n90c fqpf6n90c.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.15. Size:549K  onsemi
 fqpf6n80t.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.16. Size:890K  onsemi
 fqp6n80c fqpf6n80c.pdf 

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to