FQPF6N80. Аналоги и основные параметры
Наименование производителя: FQPF6N80
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 125 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.95 Ohm
Тип корпуса: TO-220F
Аналог (замена) для FQPF6N80
- подборⓘ MOSFET транзистора по параметрам
FQPF6N80 даташит
fqpf6n80.pdf
September 2000 TM QFET FQPF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tail
fqpf6n80t.pdf
TM QFET FQPF6N80T 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to
fqp6n80c fqpf6n80c.pdf
TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to
fqpf6n80t.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие IGBT... FQPF6N25, FQPF6N40C, FQPF6N40CF, FQPF6N40CT, FQPF6N50, FQPF6N60, FQPF6N60C, FQPF6N70, IRF9540N, FQPF6N90, FQPF6N90CT, FQPF6P25, FQPF7N10, FQPF7N10L, FQPF7N20, FQPF7N20L, FQPF7N40
History: AP9466GJ | TK18A30D | HX2N60
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Список транзисторов
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