FQPF7N65CYDTU Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQPF7N65CYDTU
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 100 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO-220F
Аналог (замена) для FQPF7N65CYDTU
FQPF7N65CYDTU Datasheet (PDF)
fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
fqp7n65c fqpf7n65c.pdf

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
fqpf7n60.pdf

April 2000TMQFETQFETQFETQFETFQPF7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.3A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been es
fqpf7n20.pdf

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.8A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has bee
Другие MOSFET... FQPF6N90CT , FQPF6P25 , FQPF7N10 , FQPF7N10L , FQPF7N20 , FQPF7N20L , FQPF7N40 , FQPF7N65CF105 , TK10A60D , FQPF7N80 , FQPF7P06 , FQPF8N60CT , FQPF8N60CYDTU , FQPF8N80CYDTU , FQPF8P10 , FQPF90N10V2 , FQPF9N08 .
History: FQPF7N40 | SI2302ADS | CSD75301W1015 | AFN4102W | VBP1606 | HFD2N70S | PJU7NA65
History: FQPF7N40 | SI2302ADS | CSD75301W1015 | AFN4102W | VBP1606 | HFD2N70S | PJU7NA65



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