FQPF8P10 - описание и поиск аналогов

 ..1. Size:667K  fairchild semi
 fqpf8p10.pdf 

TM QFET FQPF8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -5.3A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to

 9.1. Size:1280K  fairchild semi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf 

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has

 9.2. Size:1252K  fairchild semi
 fqpf8n80cydtu.pdf 

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has

 9.3. Size:865K  fairchild semi
 fqp8n90c fqpf8n90c.pdf 

QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 9.4. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf 

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 9.5. Size:750K  fairchild semi
 fqpf8n60cf.pdf 

February 2006 TM FRFET FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored t

 9.6. Size:665K  fairchild semi
 fqpf85n06.pdf 

May 2001 TM QFET FQPF85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 53A, 60V, RDS(on) = 0.010 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 86 nC) planar stripe, DMOS technology. Low Crss ( typical 165 pF) This advanced technology has been especially tailored t

 9.7. Size:925K  fairchild semi
 fqpf8n60ct fqpf8n60cydtu.pdf 

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 9.8. Size:1146K  onsemi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf 

December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET 800 V, 8.0 A, 1.55 Description Features This N-Channel enhancement mode power MOSFET is 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 4.0 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC) tec

 9.9. Size:1382K  onsemi
 fqp8n90c fqpf8n90c.pdf 

 9.10. Size:928K  onsemi
 fqp8n60c fqpf8n60c.pdf 

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 9.11. Size:1285K  onsemi
 fqpf8n60cf.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.12. Size:574K  onsemi
 fqpf85n06.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.13. Size:800K  cn vbsemi
 fqpf85n06.pdf 

FQPF85N06 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.010 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 TO-220 FULLPAK D G S D S G Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parame