Справочник MOSFET. FQPF8P10

 

FQPF8P10 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF8P10
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.53 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

FQPF8P10 Datasheet (PDF)

 ..1. Size:667K  fairchild semi
fqpf8p10.pdfpdf_icon

FQPF8P10

TMQFETFQPF8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -5.3A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to

 9.1. Size:1280K  fairchild semi
fqp8n80c fqpf8n80c fqpf8n80cydtu.pdfpdf_icon

FQPF8P10

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has

 9.2. Size:1252K  fairchild semi
fqpf8n80cydtu.pdfpdf_icon

FQPF8P10

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has

 9.3. Size:865K  fairchild semi
fqp8n90c fqpf8n90c.pdfpdf_icon

FQPF8P10

QFETFQP8N90C/FQPF8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

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