FQPF90N10V2 - описание и поиск аналогов

 ..1. Size:919K  fairchild semi
 fqp90n10v2 fqpf90n10v2.pdf 

QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 90 A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 147 nC) planar stripe, DMOS technology. Low Crss ( typical 300 pF) This advanced technology has been especially tail

 9.1. Size:578K  fairchild semi
 fqpf9p25.pdf 

December 2000 TM QFET QFET QFET QFET FQPF9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.0A, -250V, RDS(on) = 0.62 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology is e

 9.2. Size:712K  fairchild semi
 fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf 

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.3A, 500V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been

 9.3. Size:745K  fairchild semi
 fqpf9n15.pdf 

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.9A, 150V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been esp

 9.4. Size:659K  fairchild semi
 fqpf9n30.pdf 

May 2000 TM QFET QFET QFET QFET FQPF9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.0A, 300V, RDS(on) = 0.45 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been esp

 9.5. Size:1136K  fairchild semi
 fqp9n25c fqpf9n25c.pdf 

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailor

 9.6. Size:3590K  fairchild semi
 fqpf9p25ydtu.pdf 

December 2014 FQPF9P25YDTU P-Channel QFET MOSFET -250 V, -6 A, 620 m Description Features This P-Channel enhancement mode power MOSFET is -6 A, -250 V, RDS(on) = 620 m (Max.) @ VGS = -10 V, produced using Fairchild Semiconductor s proprietary planar ID = -3 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 29 nC) technology has been especia

 9.7. Size:844K  fairchild semi
 fqpf9n50ct fqpf9n50cydtu.pdf 

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

 9.8. Size:840K  fairchild semi
 fqpf9n90ct.pdf 

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to

 9.9. Size:1134K  fairchild semi
 fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf 

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailor

 9.10. Size:765K  fairchild semi
 fqpf9n50cf.pdf 

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to

 9.11. Size:553K  fairchild semi
 fqpf9n08l.pdf 

December 2000 TM QFET QFET QFET QFET FQPF9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 80V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology i

 9.12. Size:845K  fairchild semi
 fqp9n50c fqpf9n50c.pdf 

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

 9.13. Size:842K  fairchild semi
 fqp9n90c fqpf9n90c.pdf 

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to

 9.14. Size:549K  fairchild semi
 fqpf9n08.pdf 

December 2000 TM QFET QFET QFET QFET FQPF9N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 80V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.9 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology is espec

 9.15. Size:770K  fairchild semi
 fqpf9n50c.pdf 

November 2013 FQPF9N50C N-Channel QFET MOSFET 500 V, 9 A, 800 m Description Features These N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 4.5 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tailored to m

 9.16. Size:1306K  onsemi
 fqpf9p25.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:543K  onsemi
 fqpf9n25c fqpf9n25ct.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.18. Size:1136K  onsemi
 fqp9n25c fqpf9n25c.pdf 

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailor

 9.19. Size:3657K  onsemi
 fqpf9p25ydtu.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.20. Size:1297K  onsemi
 fqpf9n50cf.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.21. Size:1200K  onsemi
 fqp9n90c fqpf9n90c.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.22. Size:232K  inchange semiconductor
 fqpf9n90c.pdf 

isc N-Channel MOSFET Transistor FQPF9N90C DESCRIPTION RDS(on) = 1.4 @VGS = 10 V, ID = 4 A Fast Switching Speed 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 900 V DS